| Ident. | Authors (with country if any) | Title |
|---|
| 000640 |
| Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells |
| 000B00 |
| Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots |
| 000D95 |
| Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures : Special issue papers on quantum dots |
| 000E35 |
| Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots |
| 001092 |
| Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots |
| 001136 |
| Two-dimensional excitonic emission in InAs submonolayers |
| 001180 |
| Dynamics of doubly resonant Raman scattering and resonant luminescence in ultrathin InAs/GaAs quantum wells |
| 001185 |
| Resonant exciton effects in InAs monolayer insertions in a GaAs matrix |
| 001248 |
| Enhanced exciton binding energy in InAs monolayers grown on (311)A GaAs substrates |
| 001316 |
| Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures |
| 001336 |
| Response to Comment: ''Comment on 'Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces' '' [Appl. Phys. Lett. 66, 111 (1995)] |
| 001410 |
| Optical spectroscopic studies of InAs layer transformation on GaAs surfaces |
| 001427 |
| Magneto-optical properties in ultrathin InAs-GaAs quantum wells |
| 001445 |
| Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces |
